公开(公告)号：US20020080212A1

公开(公告)日：2002-06-27

申请号：US09426644

申请日：1999-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho MOON ,  Jong-Chun KIM ,  Sung-hee Lee

IPC: B41J002/05 ,  H05B003/00

CPC classification number: B41J2/1631 ,  B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1645 ,  B41J2/1646 ,  Y10T29/49083 ,  Y10T29/49401 ,  Y10T29/49798 ,  Y10T156/1052

Abstract: Abstract of DisclosureA manufacturing process of a plurality of fluid jetting apparatuses in a print head adapted to an output unit. The process forms a heat driving part, a membrane and a nozzle part, respectively, and then adheres them sequentially. The fluid jetting apparatuses are completed as a wafer unit by forming the nozzle part using a spinning process. The manufacturing process of the nozzle part includes a first step of forming a nozzle plate on a substrate of a wafer by the spinning process; a second step of forming jetting fluid barriers on the nozzle plate by the spinning process; a third step of forming jetting fluid chambers in the jetting fluid barriers; a fourth step of forming nozzles in the nozzle plate; and a fifth step of separating the substrate from the nozzle plate. The fifth step is accomplished after the nozzle part and the membrane are adhered to each other. The third step is accomplished by a process of wet etching, and the fourth step is accomplished by a treating apparatus of a laser beam or by a process of reactive ion etching. Since the nozzle part is formed on the silicon wafer by means of the spinning process, it is capable of adhering to the membrane in a wafer type. Accordingly, the fluid jetting apparatuses are completed as the wafer type all at once. Furthermore, since the manufacturing time of the jetting fluid apparatuses is reduced, productivity is improved.

Abstract translation: 摘要公开适用于输出单元的打印头中的多个流体喷射装置的制造过程。 该过程分别形成热驱动部分，膜和喷嘴部分，然后依次粘合。 流体喷射装置通过使用纺丝方法形成喷嘴部分而完成为晶片单元。 喷嘴部的制造工序包括通过纺丝工序在晶片的基板上形成喷嘴板的第一工序; 通过纺丝工艺在喷嘴板上形成喷射流体屏障的第二步骤; 在喷射流体屏障中形成喷射流体室的第三步骤; 在喷嘴板上形成喷嘴的第四步骤; 以及从喷嘴板分离基板的第五步骤。 在喷嘴部分和膜彼此粘附之后实现第五步。 第三步骤是通过湿式蚀刻方法实现的，第四步是通过激光束的处理装置或反应离子蚀刻工艺完成。 由于通过纺丝工艺在硅晶片上形成喷嘴部分，所以能够以晶片类型粘附在膜上。 因此，流体喷射装置一次完成为晶片类型。 此外，由于喷射流体设备的制造时间降低，生产率提高。