METHOD OF MANUFACTURING LIQUID DISCHARGING HEAD AND LIQUID DISCHARGING HEAD

    公开(公告)号:US20240123731A1

    公开(公告)日:2024-04-18

    申请号:US18486842

    申请日:2023-10-13

    IPC分类号: B41J2/16 B41J2/14

    摘要: A method of manufacturing a liquid discharging head includes preparing a wafer provided with an element and a discharge port formation member on a front surface of the wafer, forming a recessed portion in a rear surface of the wafer, attaching the rear surface of the wafer and a dicing tape, cutting the wafer along cutting lines to form an element board, and connecting an electric wiring board and a terminal of the element board. The element board includes a discharge port formation member having a discharge port for discharging liquid and includes the element to supply energy to the discharge port for liquid discharge. The recessed portion is formed at a location corresponding to the cutting lines, and an area of a region where the terminal overlaps the recessed portion is smaller than an area of a region where the terminal does not overlap the recessed portion.

    Wafer structure
    2.
    发明授权

    公开(公告)号:US11813863B2

    公开(公告)日:2023-11-14

    申请号:US17468271

    申请日:2021-09-07

    IPC分类号: B41J2/14 B41J2/16

    摘要: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.