公开(公告)号：US20240312540A1

公开(公告)日：2024-09-19

申请号：US18599471

申请日：2024-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongho AN ,  Daehan KIM

IPC: G11C16/34 ,  G11C16/32

CPC classification number: G11C16/3459 ,  G11C16/32 ,  G11C16/3418

Abstract: A memory device includes a leakage detector connected to each of a plurality of word lines and configured to obtain a program voltage and perform a leakage detection operation, and a control circuit configured to control a row decoder, a voltage generator, and the leakage detector, and to perform a leakage detection operation on the plurality of word lines. The control circuit may execute a loop including a first section and a second section, may control the program voltage not to be applied to the designated word line after a time in the first section, may use the leakage detector in response to execution of at least one designated loop to measure a voltage charged in the designated word line after the second section of the designated loop is terminated, and may perform the leakage detection operation on the basis of the measured voltage.