公开(公告)号：US20240162322A1

公开(公告)日：2024-05-16

申请号：US18206139

申请日：2023-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongmin Shin ,  Donghoon Hwang

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/42392 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device may include an active region on a substrate, channel patterns on the active region, and gate electrodes on the channel patterns, respectively, and extending in a first direction. The channel patterns may include a first subset of the channel patterns, each of which has a first width, and a second subset of the channel patterns, each of which has a second width. The first and second subsets may be adjacent to each other in a second direction. The channel patterns may further include a buffer channel pattern between the first subset and the second subset. The buffer channel pattern may include a connection side surface extending in the first direction, and the connection side surface may be configured such that a width of the buffer channel pattern changes from the first width to the second width when moving from the first subset to the second subset.