公开(公告)号：US10964753B2

公开(公告)日：2021-03-30

申请号：US16398947

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Heo ,  Takkyun Ro ,  Kyung Bae Park ,  Gyeongsu Park ,  Joo Ho Lee

IPC: H01L29/08 ,  H01L27/30 ,  H01L51/00 ,  H01L51/52 ,  H01L51/42 ,  H01L51/44

Abstract: Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0