公开(公告)号：US20200184618A1

公开(公告)日：2020-06-11

申请号：US16541380

申请日：2019-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyung AHN ,  Souk KIM ,  Joon Seo SONG ,  Young Hoon SOHN ,  Yu Sin YANG

IPC: G06T7/00 ,  G06K9/62 ,  G06K9/20

Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.