公开(公告)号：US20190187077A1

公开(公告)日：2019-06-20

申请号：US16115884

申请日：2018-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Hwan Lee ,  Sang Min KIM ,  Young Hoon SOHN ,  Yu Sin YANG ,  Chi Hoon LEE

IPC: G01N23/223 ,  H01L21/66 ,  H01L21/67

CPC classification number: G01N23/223 ,  G01N2223/608 ,  G01N2223/646 ,  H01L21/67288 ,  H01L22/12

Abstract: An apparatus for X-ray inspection is provided. The apparatus includes: a stage on which an inspection target is loaded, the stage including a first surface and an opposite second surface; an X-ray generator disposed on or over the first surface of the inspection target and configured to irradiate the inspection target with incident X-rays; and a detection system disposed on or under the second surface of the inspection target and configured to detect first transmitted X-rays transmitted through the inspection target. The detection unit includes a first lens system and a second lens system. The first transmitted X-rays pass through one of the first lens system and the second lens system. The second lens system includes a micro zone plate.

公开(公告)号：US20200184618A1

公开(公告)日：2020-06-11

申请号：US16541380

申请日：2019-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hyung AHN ,  Souk KIM ,  Joon Seo SONG ,  Young Hoon SOHN ,  Yu Sin YANG

IPC: G06T7/00 ,  G06K9/62 ,  G06K9/20

Abstract: A semiconductor pattern detecting apparatus is provided. The semiconductor pattern detecting apparatus includes a stage configured to position a wafer formed with a semiconductor pattern, the stage extending in a first direction and a second direction perpendicular to the first direction, an electron emitter configured to irradiate first electrons on the semiconductor pattern, an electrode configured to generate an electric field to induce an electric potential on a surface of the semiconductor pattern, a detector configured to detect second electrons emitted from the semiconductor pattern, an imager configured to obtain a plurality of first images by using the second electrons detected by the detector, and at least one controller configured to apply a first voltage and a second voltage different from the first voltage to the electrode alternately and repeatedly and to generate a second image by combining the plurality of first images, wherein the imager is so configured that each of the plurality of first images are obtained when the first voltage is applied to the electrode.

公开(公告)号：US20200182777A1

公开(公告)日：2020-06-11

申请号：US16532662

申请日：2019-08-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang Ik PARK ,  Kwang Rak KIM ,  Yoon Sung BAE ,  Young Hoon SOHN ,  Yu Sin YANG ,  Tae Yong JO

IPC: G01N21/27 ,  G01N21/95 ,  H01L21/66

Abstract: A substrate inspection apparatus includes a light irradiating unit irradiating first light to an inspection target on a stage, a light detecting unit detecting second light reflected by the inspection target, a spectrum generator generating a first spectrum from the second light, a noise filter module removing a noise signal from the first spectrum to generate a second spectrum, a spectrum analyzer determining a first calibration parameter and a first calibration value thereof from the second spectrum, and a hardware controller adjusting at least one of the stage, the light irradiating unit and the light detecting unit using the first calibration parameter and the first calibration value.

公开(公告)号：US20190114755A1

公开(公告)日：2019-04-18

申请号：US15937551

申请日：2018-03-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Sil LEE ,  Sung Yoon RYU ,  Young Hoon SOHN ,  Chung Sam JUN

IPC: G06T7/00 ,  G01J5/02 ,  G01N25/72 ,  H04N5/33

Abstract: According to one embodiment, a semiconductor chip inspection device includes a conveyor, an image capture device, and an analysis system. The conveyor provides a transfer path on which a semiconductor chip heated during a manufacturing process is moved. The image capture device is disposed above the transfer path and is configured to generate a thermographic image by imaging the semiconductor chip including capturing a plurality of thermographic images at different focal points in a thickness direction of the semiconductor chip. The analysis system is configured to compare the plurality of thermographic images with a plurality of standard images provided in advance, and to detect a region in which a temperature differential between a thermographic image and a respective standard image exceeds a reference value.