公开(公告)号：US20230139839A1

公开(公告)日：2023-05-04

申请号：US18090876

申请日：2022-12-29

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H10B12/00 ,  H01L21/768

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.

公开(公告)号：US12027459B2

公开(公告)日：2024-07-02

申请号：US18090876

申请日：2022-12-29

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H01L21/768 ,  H10B12/00

CPC分类号： H01L23/5228 ,  H01L21/76805 ,  H01L23/5226 ,  H10B12/482

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.

公开(公告)号：US11362031B2

公开(公告)日：2022-06-14

申请号：US16809629

申请日：2020-03-05

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H01L27/108 ,  H01L21/768

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.

公开(公告)号：US11784122B2

公开(公告)日：2023-10-10

申请号：US17739574

申请日：2022-05-09

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H01L21/768 ,  H10B12/00

CPC分类号： H01L23/5228 ,  H01L21/76805 ,  H01L23/5226 ,  H10B12/482

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.

公开(公告)号：US20210057339A1

公开(公告)日：2021-02-25

申请号：US16809629

申请日：2020-03-05

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L27/108

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.

公开(公告)号：US20240321732A1

公开(公告)日：2024-09-26

申请号：US18736075

申请日：2024-06-06

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H01L21/768 ,  H10B12/00

CPC分类号： H01L23/5228 ,  H01L21/76805 ,  H01L23/5226 ,  H10B12/482

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.

公开(公告)号：US20220262728A1

公开(公告)日：2022-08-18

申请号：US17739574

申请日：2022-05-09

申请人： Samsung Electronics Co., Ltd.

发明人： Choonghyun Lee ,  Joonyong Choe ,  Youngju Lee

IPC分类号： H01L23/522 ,  H01L27/108 ,  H01L21/768

摘要： An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.