公开(公告)号：US20230343801A1

公开(公告)日：2023-10-26

申请号：US18166241

申请日：2023-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Hee LEE ,  Dong Mo IM ,  Ji Hee YANG ,  Tae-Hun LEE ,  Ji-Hun LIM

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14645 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14689

Abstract: An image sensor includes a substrate, a photoelectric conversion region in the substrate with the substrate defining a substrate trench on the photoelectric conversion region, a floating diffusion region adjacent to a side surface of the substrate trench, in the substrate, a gate dielectric film that extends along the side surface and a lower surface of the substrate trench and a transfer gate electrode which includes a lower gate that fills a portion of the substrate trench on the gate dielectric film and has a first width, and an upper gate that has a second width smaller than the first width on the lower gate. The gate dielectric film includes a lower dielectric film interposed between the substrate and the lower gate and has a first thickness, and an upper dielectric film adjacent to the floating diffusion region and has a second thickness greater than the first thickness.