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    OPTICAL BIOSENSOR AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    OPTICAL BIOSENSOR AND MANUFACTURING METHOD THEREOF 有权
    光生物传感器及其制造方法

    公开(公告)号：US20140134712A1

    公开(公告)日：2014-05-15

    申请号：US14072118

    申请日：2013-11-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyoung Won NA ,  Yoon Dong PARK ,  Sung Dong SUH ,  Dong Mo IM

    IPC: G01N21/84 ,  H01L31/18 ,  G01N33/483

    CPC classification number: H01L31/18 ,  G01N21/7746 ,  G01N33/483

    Abstract: An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within the first layer and the second layer, and a second grating coupler within the first layer. The first grating coupler is configured to couple a light pattern provided to a front side of the optical biosensor. The second grating coupler is configured to output the light pattern coupled by the first grating coupler to a photoelectric conversion element on a rear side of the optical biosensor.

    Abstract translation: 光学生物传感器及其制造方法包括：第一层，堆叠在第一层上的第二层，第一层和第二层内的第一光栅耦合器，以及第一层内的第二光栅耦合器。 第一光栅耦合器被配置为耦合提供给光学生物传感器前侧的光图案。 第二光栅耦合器被配置为将由第一光栅耦合器耦合的光图案输出到光学生物传感器的后侧上的光电转换元件。

    SEMICONDUCTOR DEVICE INCLUDING FLOATING DIFFUSION AND EXTENSION PATTERN
    3.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING FLOATING DIFFUSION AND EXTENSION PATTERN 审中-公开

    公开(公告)号：US20200251512A1

    公开(公告)日：2020-08-06

    申请号：US16551898

    申请日：2019-08-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Mo IM ,  Seung Sik KIM ,  Ji Yoon KIM ,  Dae Hoon KIM ,  Min Woong SEO

    IPC: H01L27/146

    Abstract: A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    4.
    发明公开
    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 审中-公开

    公开(公告)号：US20230343801A1

    公开(公告)日：2023-10-26

    申请号：US18166241

    申请日：2023-02-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju Hee LEE ,  Dong Mo IM ,  Ji Hee YANG ,  Tae-Hun LEE ,  Ji-Hun LIM

    IPC: H01L27/146

    CPC classification number: H01L27/14614 ,  H01L27/14645 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14689

    Abstract: An image sensor includes a substrate, a photoelectric conversion region in the substrate with the substrate defining a substrate trench on the photoelectric conversion region, a floating diffusion region adjacent to a side surface of the substrate trench, in the substrate, a gate dielectric film that extends along the side surface and a lower surface of the substrate trench and a transfer gate electrode which includes a lower gate that fills a portion of the substrate trench on the gate dielectric film and has a first width, and an upper gate that has a second width smaller than the first width on the lower gate. The gate dielectric film includes a lower dielectric film interposed between the substrate and the lower gate and has a first thickness, and an upper dielectric film adjacent to the floating diffusion region and has a second thickness greater than the first thickness.

    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
    5.
    发明申请
    IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20220149088A1

    公开(公告)日：2022-05-12

    申请号：US17383976

    申请日：2021-07-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Mo IM ,  Ja Meyung KIM ,  Jong Eun PARK ,  Beom Suk LEE ,  Kwan Sik CHO

    IPC: H01L27/146 ,  H01L27/148

    Abstract: An image sensor includes a substrate, a photoelectric conversion region disposed inside the substrate, a first active region disposed inside the substrate to include a ground region, a floating diffusion region, and a channel region for connecting the ground region and the floating diffusion region, a substrate trench disposed inside the channel region, a transfer gate disposed on a face of the substrate to include a lower gate which fills a part of the substrate trench and has a first width, and an upper gate having a second width smaller than the first width on the lower gate, and a gate spacer disposed inside the substrate trench to be interposed between the ground region and the upper gate.

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