公开(公告)号：US20200251494A1

公开(公告)日：2020-08-06

申请号：US16856611

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Ju-Yeon LEE

IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11556

Abstract: A vertical memory device includes a substrate including a cell region and a peripheral circuit region, gate electrodes sequentially stacked on the cell region of the substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a channel on the cell region and extending through the gate electrodes in the vertical direction, a first lower contact plug on the peripheral circuit region and extending in the vertical direction, a second lower contact plug on the peripheral circuit region adjacent to the first lower contact plug and extending in the vertical direction, and a first upper wiring electrically connected to the first lower contact plug. The first upper wiring is configured to and apply an electrical signal to the first lower contact plug. The second lower contact plug is not electrically connected to an upper wiring configured to apply an electrical signal.