公开(公告)号：US20230057178A1

公开(公告)日：2023-02-23

申请号：US17744067

申请日：2022-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung Jun ROH ,  Jae Woo PARK ,  Jun Han CHOI ,  Myoung Bo KWAK ,  Jung Hwan CHOI

IPC: G05F1/56 ,  G11C5/14 ,  G11C7/10 ,  H03F3/45

Abstract: A semiconductor device including an error amplifier configured to receive a voltage of an output node and a reference voltage, a flipped voltage follower (FVF) circuit configured to receive an output of the error amplifier and maintain the voltage of the output node at the reference voltage, and a bias current control circuit configured to receive first to third mode signals, control a magnitude of a bias current flowing through the FVF circuit based on the first to third mode signals, control the bias current of a first magnitude, based on the first mode signal, control the bias current of a second magnitude smaller than the first magnitude, based on the second mode signal, and control the bias current of a third magnitude smaller than the second magnitude, based on the third mode signal.