BACK SIDE ILLUMINATION IMAGE SENSORS AND ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20210384234A1

    公开(公告)日:2021-12-09

    申请号:US17409048

    申请日:2021-08-23

    Abstract: In some example embodiments, a back side illumination (BSI) image sensor may include a pixel configured to generate electrical signals in response to light incident on a back side of a substrate. In some example embodiments, the pixel includes, a photodiode, a device isolation film adjacent to the photodiode, a dark current suppression layer above the photodiode, a light shield grid above the photodiode and including an opening area of 1 to 15% of an area of the pixel, a light shielding filter layer above the light shield grid, a planarization layer above the light shielding filter layer, a lens above the planarization layer, and/or an anti-reflective film between the photodiode and the lens.

    IMAGE SENSOR HAVING PIXELS WITH DIFFERENT LIGHT RECEIVING AREAS

    公开(公告)号:US20250151434A1

    公开(公告)日:2025-05-08

    申请号:US19016815

    申请日:2025-01-10

    Abstract: An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

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