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公开(公告)号:US20160380044A1
公开(公告)日:2016-12-29
申请号:US15064253
申请日:2016-03-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyun-Suk LEE , Jun-Goo KANG
CPC classification number: H01L28/75 , H01L27/0629 , H01L27/10852 , H01L28/90
Abstract: A capacitor may include a lower electrode structure, a dielectric layer on the lower electrode structure, and an upper electrode on the dielectric layer. The lower electrode structure may include first to third lower electrodes sequentially stacked, a first oxidation barrier pattern structure between the first lower electrode and the second lower electrode, and a second oxidation barrier pattern structure between the second lower electrode and the third lower electrode. The first oxidation barrier pattern structure may include first and second oxidation barrier patterns sequentially stacked on the first lower electrode, and the second oxidation barrier pattern structure may include third and fourth oxidation barrier patterns sequentially stacked on the second lower electrode.
Abstract translation: 电容器可以包括下电极结构,下电极结构上的电介质层和电介质层上的上电极。 下电极结构可以包括顺序层叠的第一至第三下电极,第一下电极和第二下电极之间的第一氧化阻挡图案结构,以及在第二下电极和第三下电极之间的第二氧化阻挡图案结构。 第一氧化屏障图案结构可以包括顺序层叠在第一下电极上的第一氧化阻挡图案和第二氧化屏障图案,第二氧化屏障图案结构可以包括顺序堆叠在第二下电极上的第三氧化阻挡图案和第四氧化阻挡图案。