公开(公告)号：US20170324031A1

公开(公告)日：2017-11-09

申请号：US15658780

申请日：2017-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Man HWANG ,  Shi-Jung KIM ,  Mi-Lim PARK ,  Jun-Soo BAE ,  Seung-Woo LEE

IPC: H01L43/08 ,  H01L43/12

CPC classification number: H01L43/08 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.