Light-emitting devices and methods of manufacturing the same

    公开(公告)号:US10109763B2

    公开(公告)日:2018-10-23

    申请号:US15357395

    申请日:2016-11-21

    Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation. The p-type semiconductor layer may include magnesium-hydrogen (Mg—H) complexes at a concentration of about 1×1017 atoms/cm3 to about 1×1018 atoms/cm3.

    Semiconductor light-emitting devices and methods of manufacturing the same

    公开(公告)号:US10121939B2

    公开(公告)日:2018-11-06

    申请号:US15626410

    申请日:2017-06-19

    Abstract: A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.

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