公开(公告)号：US10109763B2

公开(公告)日：2018-10-23

申请号：US15357395

申请日：2016-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-sung Hyun ,  Dong-yul Lee ,  Jung-kyu Park

IPC: H01L33/00

Abstract: A light-emitting device that may be manufactured includes an n-type semiconductor layer including a first dopant on a substrate, an active layer on the n-type semiconductor layer, and a p-type semiconductor layer including a second dopant on the active layer. The light-emitting device may be formed according to at least one of a first layering process and a second layering process. The first layering process may include implanting the first dopant into the n-type semiconductor layer into the n-type semiconductor layer according to an ion-implantation process, and the second layering process may include implanting the second dopant into the p-type semiconductor layer according to an ion-implantation process. Forming a semiconductor layer that includes an ion-implanted dopant may include thermally annealing the semiconductor layer subsequent to the ion implantation. The p-type semiconductor layer may include magnesium-hydrogen (Mg—H) complexes at a concentration of about 1×1017 atoms/cm3 to about 1×1018 atoms/cm3.

公开(公告)号：US20190123237A1

公开(公告)日：2019-04-25

申请号：US15906539

申请日：2018-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung-kyun Kim ,  Jin-young Lim ,  Jae-sung Hyun

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/12 ,  H01L33/06 ,  H01L33/00

Abstract: A light-emitting device includes a light-emitting structure including a first-conductivity-type nitride semiconductor layer on a substrate, an active layer on the first-conductivity-type nitride semiconductor layer, and a second-conductivity-type nitride semiconductor layer on the active layer, and a buffer layer between the substrate and the light-emitting structure. The buffer layer includes a plurality of voids. The plurality of voids extend vertically into the buffer layer from a surface of the buffer layer. The surface of the buffer layer is proximate to the light-emitting structure. The plurality of voids have different horizontal sectional areas.