公开(公告)号：US20210202490A1

公开(公告)日：2021-07-01

申请号：US16943019

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehwan CHO ,  Junghwan OH ,  Sangho LEE ,  Junwon LEE ,  Jinwoo BAE ,  Sunghee HAN ,  Yoosang HWANG

IPC: H01L27/108

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.

公开(公告)号：US20220246621A1

公开(公告)日：2022-08-04

申请号：US17725806

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehwan CHO ,  Junghwan OH ,  Sangho LEE ,  Junwon LEE ,  Jinwoo BAE ,  Sunghee HAN ,  Yoosang HWANG

IPC: H01L27/108

Abstract: A semiconductor device may include a bottom sub-electrode on a substrate, a top sub-electrode on the bottom sub-electrode, a dielectric layer covering the bottom and top sub-electrodes, and a plate electrode on the dielectric layer. The top sub-electrode may include a step extending from a side surface thereof, which is adjacent to the bottom sub-electrode, to an inner portion of the top sub-electrode. The top sub-electrode may include a lower portion at a level that is lower than the step and an upper portion at a level which is higher than the step. A maximum width of the lower portion may be narrower than a minimum width of the upper portion. The maximum width of the lower portion may be narrower than a width of a top end of the bottom sub-electrode. The bottom sub-electrode may include a recess in a region adjacent to the top sub-electrode.