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公开(公告)号：US20240349483A1
公开(公告)日：2024-10-17
申请号：US18415754
申请日：2024-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： SOHYUN PARK , Inwoo KIM , Sangho LEE , Jihun LEE
IPC: H10B12/00
CPC classification number: H10B12/315 , H10B12/0335 , H10B12/482
Abstract: A semiconductor device includes an active pattern on a substrate; a bit line structure on a central portion of the active pattern; a first spacer structure and a second spacer structure disposed on a first sidewall and a second sidewall, respectively, of the bit line structure, the first sidewall and the second sidewall of the bit line structure facing each other in the first direction; a lower contact plug on each of opposite end portions of the active pattern; and an upper contact plug on the lower contact plug. The upper contact plug may include a conductive pattern; and a conductive spacer covering a lower surface of the conductive pattern, wherein the conductive spacer contacts an outer sidewall of the first spacer structure, and does not contact an outer sidewall of the second spacer structure.
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公开(公告)号：US20240334677A1
公开(公告)日：2024-10-03
申请号：US18480389
申请日：2023-10-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangho LEE , Moonyoung JEONG , Ilgweon KIM , Yoongi HONG
IPC: H10B12/00
CPC classification number: H10B12/315 , H10B12/05
Abstract: A semiconductor memory device includes a bit line, first and second word lines spaced apart from each other on the bit line, a back gate electrode between the first and second word lines, a first active pattern between the first word line and the back gate electrode, a second active pattern between the second word line and the back gate electrode, contact patterns connected to the first and second active patterns, respectively, and a first gate insulating pattern between the first active pattern and the first word line and between the second active pattern and the second word line. A top surface of the first gate insulating pattern is located at substantially a same height as top surfaces of the first and second word lines. The first gate insulating pattern includes a high-k dielectric material.
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公开(公告)号：US20240162958A1
公开(公告)日：2024-05-16
申请号：US18496450
申请日：2023-10-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Deokhui LEE , Dongmyung KIM , Wonjun KIM , Sangho LEE , Juho LEE
IPC: H04B7/06 , H04B17/318
CPC classification number: H04B7/0626 , H04B17/328
Abstract: The present disclosure relates to a 5G communication system or a 6G communication system for supporting higher data rates beyond a 4G communication system such as long term evolution (LTE). A method performed by a user equipment (UE) in a 5G or 6G communication system is provided. The method includes receiving a message including configuration information for a conditional channel state information (CSI) report from a base station, receiving multiple CSI-reference signals (RSs) on different beams from the base station, selecting at least one CSI-RS satisfying at least one of a first condition or a second condition from the multiple CSI-RSs, based on the configuration information, and transmitting the conditional CSI report including information on the at least one CSI-RS to the base station.
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4.发明公开公开(公告)号：US20240080075A1
公开(公告)日：2024-03-07
申请号：US18262147
申请日：2022-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangho LEE , Byounghoon JUNG , Jungsoo JUNG , Jiyoung CHA , Jinho CHOI
CPC classification number: H04B7/0617 , H04B7/0695 , H04B7/088
Abstract: The present disclosure relates to a communication method and device in a beamforming-based wireless communication system supporting a plurality of frequency bands, the communication method for a terminal, according to an embodiment of the present disclosure, comprising the steps of: performing a beam search using a plurality of first reception beams in a first frequency band and receiving a synchronization signal block (SSB) comprising first information about a base station provided at the same location; performing, on the basis of the first information, a beam search for a plurality of second reception beams in a second frequency band belonging to a subset of the first reception beams that received the SSB in the first frequency band; and communicating with the base station in the second frequency band by selecting an optimal pair of transmission and reception beams as result of the beam search for the plurality of second reception beams.
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5.发明公开公开(公告)号：US20240006391A1
公开(公告)日：2024-01-04
申请号：US18467062
申请日：2023-09-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangho LEE , Kihyun KIM , Sangyong PARK , Kwanghyun BAEK , Seungjae BAEK
IPC: H01L25/16 , H01L23/498 , H01L23/00 , H01L23/13 , H05K1/18
CPC classification number: H01L25/16 , H01L23/49833 , H01L24/16 , H01L23/13 , H01L23/49816 , H05K1/181 , H01L2224/16227 , H01L2924/19106 , H05K2201/10098 , H05K2201/10378 , H05K2201/10015 , H05K2201/10515 , H05K2201/10734 , H05K2201/10962 , H05K2201/10704
Abstract: A package device is provided. The package device includes a substrate, a plurality of upper lands disposed on one surface of the substrate, a plurality of upper solder balls disposed on the plurality of upper lands, a die connected to the plurality of upper solder balls, a plurality of lower lands disposed on the other surface of the substrate, a plurality of lower solder balls disposed on some of the plurality of lower lands, and a capacitor connected to the lower lands on which the plurality of lower solder balls are not disposed among the plurality of lower lands, provided on an opposite side of the die, and including a height greater than the height of the plurality of lower solder balls.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20230421224A1
公开(公告)日：2023-12-28
申请号：US18254411
申请日：2021-12-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangho LEE , Sungjin SHIN , Byunghyun LEE , Jungsoo JUNG
IPC: H04B7/06
CPC classification number: H04B7/0626 , H04B7/0639 , H04B7/0632
Abstract: The present disclosure relates to a 6G communication system for accomplishing ultra-low delay time and a data transmission rate higher than that of 4G and 5G communication systems. According to embodiments of the present disclosure, a base station can match (or map), to a channel state information-reference signal (CSI-RS), beams having a high probability of being selected as the beam with the best performance at the location of a terminal, and can provide the CSI-RS to the terminal. Therefore, the possibility of the inclusion of the beams with the best performance from among the beams corresponding to the CSI-RS can be increased. Thus, beam tracking with more improved performance can be performed when a beamforming technology is operated in millimeter wave and terahertz bands, or ultrahigh frequency bands or higher.
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公开(公告)号：US20230360867A1
公开(公告)日：2023-11-09
申请号：US18354060
申请日：2023-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangho LEE , Geunyong PARK , Sangjin JEONG
Abstract: A button assembly includes: a printed circuit board to which a contact switch is connected; a button member that receives an external force and presses the contact switch; and a support frame that is disposed on the front surface of the printed circuit board and includes a mounting hole to which the button member is mounted, wherein the button member includes a pressing projection for selectively pressing the contact switch through the mounting hole, and the support frame includes a support member that is disposed in the center of the mounting hole and selectively supports the rear surface of the button member and an elastic leg that elastically connects the support member and the inner surface of the mounting hole.
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公开(公告)号：US20230320066A1
公开(公告)日：2023-10-05
申请号：US17951379
申请日：2022-09-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Moonyoung JEONG , Kiseok LEE , Hyungeun CHOI , Hyungjun NOH , Sangho LEE
IPC: H01L27/108
CPC classification number: H01L27/10805
Abstract: A semiconductor device may include a substrate including a memory cell region between a first connection region and a second connection region, gate electrodes extending in a first direction and including first pad regions having a step structure on the first connection region, back gate electrodes between the gate electrodes and extending in a direction opposite the first direction, vertical conductive patterns extending in a vertical direction and spaced apart from each other in the first direction on the memory cell region of the substrate, and active layers between the gate electrodes and the back gate electrodes on the memory cell region of the substrate. The active layers may extend in a second direction, intersecting the first direction, and may be electrically connected to the vertical conductive patterns. The back gate electrodes may include second pad regions having a step structure on the second connection region.
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公开(公告)号：US20230272968A1
公开(公告)日：2023-08-31
申请号：US18310883
申请日：2023-05-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangho LEE , Changhyun PARK , Suho JO , Byoungmok KIM , Jonghyun SON , Bongkeun LIM , Jaeyeon HWANG
CPC classification number: F25D23/028 , H04R1/028 , H04R1/08
Abstract: A refrigerator is provided. The refrigerator includes a main body in which a storage chamber having an open front surface is provided, a door rotatably coupled to the main body to open or close the storage chamber, and a microphone device disposed on an upper end of the door and configured to receive a voice command, wherein the microphone device includes a microphone supported by a substrate and configured to receive voice data, a cover protruding upward from the upper end of the door and including a voice input hole passing through a front surface and a rear surface of the cover and a microphone hole vertically extending downward from the voice input hole so that the voice input hole and the microphone are connected, and a sealing member disposed between the substrate and the cover so that the substrate is in close contact with the cover.
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公开(公告)号：US20230189164A1
公开(公告)日：2023-06-15
申请号：US18078423
申请日：2022-12-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bongsung SEO , Suhwook KIM , Seungil PARK , Sangho LEE
CPC classification number: H04W52/325 , H04W52/24
Abstract: The disclosure relates to a method and a device for transmitting and receiving a signal by a base station or a terminal in a wireless communication system. Specifically, a method performed by a first device in a wireless communication system includes deriving an amplitude scaling factor based on a comparison between amplitude distribution of a pilot signal corresponding to a first time resource domain and the amplitude distribution of a data signal corresponding to a second time resource domain; and transmitting, to a second device, a physical channel including the pilot signal and the data signal and the amplitude scaling factor, wherein the pilot signal is transmitted with a power determined based on the amplitude scaling factor, and power compensation for the data signal is based on the amplitude scaling factor.
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