公开(公告)号：US20250142998A1

公开(公告)日：2025-05-01

申请号：US18769794

申请日：2024-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taemin KIM ,  Jungsan KIM ,  Yongsoon PARK ,  Seungho LEE

IPC: H01L27/146

Abstract: An image sensor includes a substrate including adjacent first and second pixel regions; a photoelectric converter at the substrate; and a pixel isolation portion separating the first and second pixel regions based on penetrating at least a part of the substrate between the first and second pixel regions. The pixel isolation portion includes first and second insulation portions respectively adjacent to the first and second pixel regions, and a conductive layer and an inner layer between the first and second insulation portions and including different materials. The pixel isolation portion includes a first portion including a portion where the conductive layer occupies a space between the first and second insulation portions in an intersection direction that intersects an extension direction of the pixel isolation portion, and a second portion including the conductive layer and the inner layer between the first and second insulation portions in the intersection direction.

公开(公告)号：US20240170530A1

公开(公告)日：2024-05-23

申请号：US18387702

申请日：2023-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingyu BAEK ,  Changyong UM ,  Kwansik KIM ,  Jungsan KIM ,  Taemin KIM

IPC: H01G15/00 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06

CPC classification number: H01L28/75 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/0629 ,  H01L28/90

Abstract: An integrated circuit device, including a substrate; a lower insulating film; and a capacitor structure including: a plurality of first conductive patterns sequentially stacked on the lower insulating film; a plurality of second conductive patterns on the plurality of first conductive patterns; a first via at a first side of the capacitor structure, wherein the first via physically contacts and is electrically connected to the plurality of first conductive patterns, and is not electrically connected to the plurality of second conductive patterns; and a second via at a second side of the capacitor structure, wherein the second via physically contacts and is electrically connected to the plurality of second conductive patterns, and is not electrically connected to the plurality of first conductive patterns.