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1.发明申请公开(公告)号：US20200220077A1
公开(公告)日：2020-07-09
申请号：US16824927
申请日：2020-03-20
发明人： Shin-Jae Kang , Gyuhwan Oh , Jiyoon Chung , Junyeon Hwang
摘要： Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
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2.发明授权公开(公告)号：US11127900B2
公开(公告)日：2021-09-21
申请号：US16824927
申请日：2020-03-20
发明人： Shin-Jae Kang , Gyuhwan Oh , Jiyoon Chung , Junyeon Hwang
摘要： Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
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3.发明授权公开(公告)号：US10720577B2
公开(公告)日：2020-07-21
申请号：US15862133
申请日：2018-01-04
发明人： Shin-Jae Kang , Gyuhwan Oh , Jiyoon Chung , Junyeon Hwang
摘要： Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
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4.发明申请公开(公告)号：US20190067569A1
公开(公告)日：2019-02-28
申请号：US15862133
申请日：2018-01-04
发明人： Shin-Jae Kang , Gyuhwan Oh , Jiyoon Chung , Junyeon Hwang
摘要： Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
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