公开(公告)号：US20250056807A1

公开(公告)日：2025-02-13

申请号：US18790129

申请日：2024-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juseong Min ,  Jaebok Baek ,  Taekkyu Yoon ,  Jeehoon Han

IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A semiconductor device includes a substrate, active regions extending on the substrate in a first direction, the active regions spaced apart from each other in a second direction perpendicular to the first direction, and arranged in a third direction oblique to the first direction and second direction, and gate electrodes disposed on the active regions and including a first edge extending in the second direction, a second edge extending in the first direction, and a corner region defined by the first edge and the second edge, wherein the corner region includes a protrusion having a width narrowing in a direction away from a center of each of the gate electrodes in plan view.