公开(公告)号：US20230223454A1

公开(公告)日：2023-07-13

申请号：US17898028

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： YUNJIN KIM ,  KI HO BAE ,  BOUN YOON ,  ILYOUNG YOON

IPC: H01L29/423 ,  H01L29/417

CPC classification number: H01L29/4238 ,  H01L29/41775 ,  H01L29/42364 ,  H01L29/41766

Abstract: A semiconductor device may include a substrate including a first cell region, a second cell region, and a dummy region between the first and second cell regions, and conductive patterns included in the first cell region, the second cell region, and the dummy region. A first pattern density, which is defined as a density of the conductive patterns of the first cell region, may be different from a second pattern density, which is defined as a density of the conductive patterns of the second cell region. A third pattern density, which is defined as a density of the conductive patterns of the dummy region, gradually changes in a region between the first cell region and the second cell region. A top surface of the substrate may be inclined at an angle, in the dummy region.