公开(公告)号：US20220415936A1

公开(公告)日：2022-12-29

申请号：US17696936

申请日：2022-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehoon JEON ,  Kangmook LIM ,  Jeyeoun JUNG ,  Jihye JEONG

IPC: H01L27/146

Abstract: Image sensors may include a semiconductor substrate including a first surface and a second surface opposite the first surface and including a plurality of pixels, a first pixel isolation structure including a first trench recessed from the first surface of the semiconductor substrate into the semiconductor substrate and a conductive layer in the first trench, and a second pixel isolation structure including a second trench and a third trench each recessed from the second surface of the semiconductor substrate into the semiconductor substrate and a dielectric layer in the second trench and the third trench. The first pixel isolation structure and the second pixel isolation structure may contact each other and separate the pixels from each other in the semiconductor substrate.

公开(公告)号：US20210242270A1

公开(公告)日：2021-08-05

申请号：US16904708

申请日：2020-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kangmook LIM ,  Sungin KIM ,  Changhwa KIM ,  Yeoseon CHOI

IPC: H01L27/146

Abstract: An image sensor is disclosed. The image sensor includes first, second, third and fourth unit pixels. Each of the unit pixels includes a first transfer transistor structure, a second transfer transistor structure and a third transfer transistor structure, a first source follower transistor structure, a second source follower transistor structure and a third source follower transistor structure, and a first selection transistor structure, a second selection transistor structure and a third selection transistor structure, the fourth unit pixel includes a fourth transfer transistor structure and a reset transistor structure, and each of the transfer transistor structures includes a channel electrode and a gate structure that surrounds side surfaces of the channel electrode.