公开(公告)号：US20220415936A1

公开(公告)日：2022-12-29

申请号：US17696936

申请日：2022-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehoon JEON ,  Kangmook LIM ,  Jeyeoun JUNG ,  Jihye JEONG

IPC: H01L27/146

Abstract: Image sensors may include a semiconductor substrate including a first surface and a second surface opposite the first surface and including a plurality of pixels, a first pixel isolation structure including a first trench recessed from the first surface of the semiconductor substrate into the semiconductor substrate and a conductive layer in the first trench, and a second pixel isolation structure including a second trench and a third trench each recessed from the second surface of the semiconductor substrate into the semiconductor substrate and a dielectric layer in the second trench and the third trench. The first pixel isolation structure and the second pixel isolation structure may contact each other and separate the pixels from each other in the semiconductor substrate.

公开(公告)号：US20210337155A1

公开(公告)日：2021-10-28

申请号：US17237843

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae CHU ,  Gwideok Ryan LEE ,  Taeyon LEE ,  Jaehoon JEON

IPC: H04N5/3745 ,  H04N5/378

Abstract: A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.