公开(公告)号：US20130015454A1

公开(公告)日：2013-01-17

申请号：US13621531

申请日：2012-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-bae PARK ,  Myung-kwan RYU ,  Kee-chan PARK ,  Jong-baek SEON

IPC: H01L29/786

CPC classification number: H01L27/1288 ,  H01L27/12 ,  H01L27/124 ,  H01L29/7869

Abstract: Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process.

Abstract translation: 可以通过执行一个处理来形成用于连接面板结构的元件的通孔。 例如，可以通过仅执行一个处理来形成用于连接晶体管和与晶体管间隔开的导电层的通孔。