公开(公告)号：US20210159086A1

公开(公告)日：2021-05-27

申请号：US16928548

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taisoo LIM ,  Kyungwook PARK ,  Wangyup RYU ,  Keun LEE ,  Changwoo LEE ,  Hauk HAN

IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/673

Abstract: A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.

公开(公告)号：US20230135639A1

公开(公告)日：2023-05-04

申请号：US17888647

申请日：2022-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun LEE ,  Kihyun YOON ,  Jeonggil LEE ,  Hauk HAN

IPC: H01L27/11556 ,  H01L29/423

Abstract: An electrode structure includes a conductive electrode, the conductive electrode including a first surface, an insulating layer on the conductive electrode, the insulating layer being in contact with the first surface of the conductive electrode, and a nano dot pattern in the conductive electrode and spaced apart from the first surface of the conductive electrode, the nano dot pattern including nano dots arranged in parallel to the first surface of the conductive electrode, and each of the nano dots including a first side surface adjacent to the first surface of the conductive electrode, the first side surface being flat and parallel to the first surface of the conductive electrode, and a second side surface opposite to the first side surface, the second side surface being convex in a direction away from the first surface of the conductive electrode.