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    DRAM DEVICE INCLUDING AN AIR GAP AND A SEALING LAYER
    2.
    发明申请
    DRAM DEVICE INCLUDING AN AIR GAP AND A SEALING LAYER 有权

    公开(公告)号：US20220246620A1

    公开(公告)日：2022-08-04

    申请号：US17723218

    申请日：2022-04-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoongoo KANG ,  Wonseok YOO ,  Hokyun AN ,  Kyungwook PARK ,  Dain LEE

    IPC: H01L27/108 ,  G11C5/06 ,  H01L29/06

    Abstract: A DRAM device includes an isolation region defining source and drain regions in a substrate, a first bit line structure connected to the source region, a second bit line structure disposed on the isolation region, an inner spacer vertically extending on a first sidewall of the first bit line structure, an air gap is between the inner spacer and an outer spacer, a storage contact between the first and second bit line structures and connected to the drain region, a landing pad structure vertically on the storage contact, and a storage structure vertically on the landing pad structure. The sealing layer seals a top of the first air gap. The sealing layer includes a first sealing layer on a first sidewall of a pad isolation trench, and a second sealing layer on a second sidewall of the pad isolation trench and separated from the first sealing layer.

    DRAM DEVICE INCLUDING AN AIR GAP AND A SEALING LAYER
    3.
    发明申请
    DRAM DEVICE INCLUDING AN AIR GAP AND A SEALING LAYER 有权

    公开(公告)号：US20210066304A1

    公开(公告)日：2021-03-04

    申请号：US16837274

    申请日：2020-04-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yoongoo KANG ,  Wonseok YOO ,  Hokyun AN ,  Kyungwook PARK ,  Dain LEE

    IPC: H01L27/108 ,  G11C5/06 ,  H01L29/06

    Abstract: A DRAM device includes an isolation region defining source and drain regions in a substrate, a first bit line structure connected to the source region, a second bit line structure disposed on the isolation region, an inner spacer vertically extending on a first sidewall of the first bit line structure, an air gap is between the inner spacer and an outer spacer, a storage contact between the first and second bit line structures and connected to the drain region, a landing pad structure vertically on the storage contact, and a storage structure vertically on the landing pad structure. The sealing layer seals a top of the first air gap. The sealing layer includes a first sealing layer on a first sidewall of a pad isolation trench, and a second sealing layer on a second sidewall of the pad isolation trench and separated from the first sealing layer.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20250072087A1

    公开(公告)日：2025-02-27

    申请号：US18583269

    申请日：2024-02-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyungwook PARK ,  Sangmin KANG ,  Changwoo SEO ,  Suyoun SONG ,  Dain LEE

    IPC: H01L29/417 ,  H01L23/528

    Abstract: A semiconductor device may include first and second active patterns, each including a center portion and an edge portion, the center portion of the first active pattern and the edge portion of the second active pattern adjacent to each other, a device isolation pattern between the first and second active patterns, a bit line node contact on the center portion of the first active pattern, a bit line on the bit line node contact, a storage node contact on the edge portion of the second active pattern, a bit line spacer between the bit line and the storage node contact, and a gapfill insulating pattern between a lower portion of the bit line spacer and the storage node contact. The center portion of the first active pattern may include a center oxide region in an upper portion thereof.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING AIR GAP
    5.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING AIR GAP 有权

    公开(公告)号：US20220093387A1

    公开(公告)日：2022-03-24

    申请号：US17222195

    申请日：2021-04-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dain LEE ,  Yoongoo KANG ,  Wonseok YOO ,  Jinwon MA ,  Kyungwook PARK ,  Changwoo SEO ,  Suyoun SONG

    IPC: H01L21/02 ,  C23C16/455

    Abstract: A semiconductor device manufacturing method includes loading a semiconductor substrate into a chamber, the semiconductor substrate including a silicon oxide film, depositing a seed layer on the silicon oxide film by supplying a first silicon source material, supplying a purge gas on the seed layer, depositing a protective layer on the seed layer by repeating a first cycle, the first cycle including supplying a base source material layer and subsequently supplying the first silicon source material, and depositing a silicon nitride film on the protective layer by repeating a second cycle, the second cycle including supplying a second silicon source material and subsequently supplying a nitrogen source material.

    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND APPARATUSES FOR MANUFACTURING THE SAME
    6.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES AND APPARATUSES FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20210159086A1

    公开(公告)日：2021-05-27

    申请号：US16928548

    申请日：2020-07-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taisoo LIM ,  Kyungwook PARK ,  Wangyup RYU ,  Keun LEE ,  Changwoo LEE ,  Hauk HAN

    IPC: H01L21/3205 ,  H01L21/285 ,  H01L21/673

    Abstract: A method of manufacturing a semiconductor device may include forming a stack structure by alternately stacking sacrificial layers and interlayer insulating layers on a substrate, forming channel structures extending through the stack structure, forming openings extending through the stack structure, forming lateral openings by removing the sacrificial layers exposed by the openings, and forming gate electrodes in the lateral openings. Forming the gate electrodes may include supplying a source gas containing tungsten (W) wherein the source gas is heated to a first temperature and is supplied in a deposition apparatus at the first temperature, supplying a reactant gas containing hydrogen (H) subsequently to supplying the source gas, wherein the reactant gas is heated to a second temperature and is supplied in the deposition apparatus at the second temperature, and supplying a purge gas subsequently to supplying the reactant gas.

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