公开(公告)号：US20230178477A1

公开(公告)日：2023-06-08

申请号：US17866917

申请日：2022-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Anthony Dongick LEE ,  Sang Cheol NA ,  Seo Woo NAM ,  Ki Chul PARK

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/5226 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/5283 ,  H01L23/53238

Abstract: A semiconductor device is provided. The semiconductor device comprises a first wiring structure which includes a first material, and has a first width on a lowest surface in a first direction and a second wiring structure which includes a second material, is spaced apart from the first wiring structure in the first direction, and has a second width smaller than the first width on a lowest surface in the first direction, wherein a highest surface of the first wiring structure has a third width smaller than the first width in the first direction, and a highest surface of the second wiring structure has a fourth width smaller than the second width in the first direction.