公开(公告)号：US10115797B2

公开(公告)日：2018-10-30

申请号：US15059673

申请日：2016-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yeol Song ,  Wan-don Kim ,  Sang-Jin Hyun ,  Jin-wook Lee ,  Kee-sang Kwon ,  Ki-hyung Ko ,  Sung-woo Myung

IPC: H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/28

Abstract: In a semiconductor device including a gate line having a relatively narrow width and a relatively smaller pitch and a method of manufacturing the semiconductor device, the semiconductor device includes a substrate having a fin-type active region, a gate insulating layer that covers an upper surface and sides of the fin-type active region, and a gate line that extends and intersects the fin-type active region while covering the upper surface and the both sides of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.