公开(公告)号：US09029916B2

公开(公告)日：2015-05-12

申请号：US14186831

申请日：2014-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hoon Lee ,  Ki-se Kim

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/7783 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/66143 ,  H01L29/66462 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/872

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract translation: 基于氮化镓（GaN）的半导体器件及其制造方法。 GaN基半导体器件可以包括散热基板（即，导热基板）; 布置在散热基板上并具有N面极性的GaN基多层; 以及配置在GaN基多层上的异质结构场效应晶体管（HFET）或肖特基电极。 HFET器件可以包括具有双凹槽结构的栅极。 虽然正在制造这种GaN基半导体器件，但是可以使用晶片接合工艺和激光剥离工艺。