公开(公告)号：US20190148226A1

公开(公告)日：2019-05-16

申请号：US16154896

申请日：2018-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-hyuk YIM ,  Kuo Tai HUANG ,  Wan-don KIM ,  Sang-jin HYUN

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/66 ,  H01L29/417 ,  H01L23/532

Abstract: An integrated circuit (IC) device includes a substrate having a fin-type active region extending in a first direction, a gate structure intersecting the fin-type active region on the substrate, the gate structure extending in a second direction perpendicular to the first direction and parallel to a top surface of the substrate, source and drain regions on both sides of the gate structure, and a first contact structure electrically connected to one of the source and drain regions, the first contact structure including a first contact plug including a first material and a first wetting layer surrounding the first contact plug, the first wetting layer including a second material having a lattice constant that differs from a lattice constant of the first material by about 10% or less.