公开(公告)号：US20170133108A1

公开(公告)日：2017-05-11

申请号：US15237731

申请日：2016-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-won Lee ,  Chang-soo Lee

IPC: G11C29/00 ,  G11C11/408 ,  G11C29/04

CPC classification number: G11C29/76 ,  G11C11/408 ,  G11C29/04 ,  G11C29/78 ,  G11C29/804 ,  G11C29/808 ,  G11C29/846 ,  G11C29/848

Abstract: Provided is a memory device including a memory cell array including a normal area in which a plurality of memory cells are arranged, and a redundancy area in which a plurality of redundancy memory cells are arranged, and a repair controller configured to control a repair operation on a defect cell from among the plurality of memory cells according to a first repair unit, and switch a repair unit from the first repair unit to a second repair unit different from the first repair unit when the repair operation based on the first repair unit is completed.

公开(公告)号：US09767922B2

公开(公告)日：2017-09-19

申请号：US15237731

申请日：2016-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-won Lee ,  Chang-soo Lee

IPC: G11C29/00 ,  G11C29/04 ,  G11C11/408

CPC classification number: G11C29/76 ,  G11C11/408 ,  G11C29/04 ,  G11C29/78 ,  G11C29/804 ,  G11C29/808 ,  G11C29/846 ,  G11C29/848

Abstract: Provided is a memory device including a memory cell array including a normal area in which a plurality of memory cells are arranged, and a redundancy area in which a plurality of redundancy memory cells are arranged, and a repair controller configured to control a repair operation on a defect cell from among the plurality of memory cells according to a first repair unit, and switch a repair unit from the first repair unit to a second repair unit different from the first repair unit when the repair operation based on the first repair unit is completed.