公开(公告)号：US20230005953A1

公开(公告)日：2023-01-05

申请号：US17728317

申请日：2022-04-25

申请人： Samsung Electronics Co., Ltd.

发明人： Youngjin Jung ,  Sora Kim ,  Haeli Park ,  Kwuiyeon Yu ,  Janggn Yun

IPC分类号： H01L27/11582 ,  G11C16/04 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573

摘要： An integrated circuit device according to the inventive concept includes: a semiconductor substrate including a cell region and a connection region; a gate stack including a plurality of gate electrodes and a plurality of insulating layers extending on a main surface of the semiconductor substrate in a horizontal direction and alternately stacked thereon in a vertical direction, the gate stack having a stair structure in the connection region; and a plurality of contact plugs in the connection region, wherein, in a portion of the connection region, a first length, in the horizontal direction, of a first gate electrode that is located in the lowest layer among the plurality of gate electrodes is less than a second length, in the horizontal direction, of a second gate electrode that is located above the first gate electrode.