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公开(公告)号:US20210313427A1
公开(公告)日:2021-10-07
申请号:US17085467
申请日:2020-10-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunggil KIM , Kyengmun KANG , Juyon SUH , Hyeeun HONG
Abstract: A semiconductor device, includes: gate electrodes spaced apart from each other and on a substrate; channel structures penetrating the gate electrodes, each of channel structures including a channel layer, a gate dielectric layer between the channel layer and the gate electrodes, a channel insulating layer filling between the channel layers, a channel pad on the channel insulating layer; and separation regions penetrating the gate electrodes, and spaced apart from each other, wherein the gate dielectric layer extends upwardly, further than the channel layer upwardly such that a portion of an inner side surface of the gate dielectric layer contacts the channel pad, the channel pad includes a lower pad on an upper end of the channel layer and the inner side surface of the gate dielectric layer, and having a first recess between the inner side surfaces of the gate dielectric layer; and an upper pad having a first portion in the first recess and a second portion extending from the first portion in a direction, parallel to an upper surface of the substrate on the first portion.
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公开(公告)号:US20220278201A1
公开(公告)日:2022-09-01
申请号:US17749719
申请日:2022-05-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sunggil KIM , Kyengmun KANG , Juyon SUH , Hyeeun HONG
Abstract: A semiconductor device, includes: gate electrodes spaced apart from each other and on a substrate; channel structures penetrating the gate electrodes, each of channel structures including a channel layer, a gate dielectric layer between the channel layer and the gate electrodes, a channel insulating layer filling between the channel layers, a channel pad on the channel insulating layer; and separation regions penetrating the gate electrodes, and spaced apart from each other, wherein the gate dielectric layer extends upwardly, further than the channel layer upwardly such that a portion of an inner side surface of the gate dielectric layer contacts the channel pad, the channel pad includes a lower pad on an upper end of the channel layer and the inner side surface of the gate dielectric layer, and having a first recess between the inner side surfaces of the gate dielectric layer; and an upper pad having a first portion in the first recess and a second portion extending from the first portion in a direction, parallel to an upper surface of the substrate on the first portion.
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