公开(公告)号：US20250155794A1

公开(公告)日：2025-05-15

申请号：US18656776

申请日：2024-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeonghwan KANG ,  Hungbae AHN ,  Sangoh PARK

IPC: G03F1/36 ,  G03F1/76

Abstract: Some example embodiments provide an optical proximity correction (OPC) method using an OPC model having improved performance and/or a method of manufacturing a mask by using the OPC method. An OPC method includes receiving a design layout of a target pattern, generating a first OPC model on the design layout, in which an optical effect of an exposure process is reflected, generating a second OPC model in which a characteristic of a photoresist in the exposure process is reflected, and performing a simulation using the first and second OPC models to obtain an OPC-performed design layout. The generating the second OPC model includes differently applying a combination of kernel functions, used in the second OPC model, to each pattern region.