公开(公告)号：US20220344384A1

公开(公告)日：2022-10-27

申请号：US17537926

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ji JUNG ,  Doo Sik SEOL ,  Sung Min AN ,  Kyung Duck LEE ,  Kyung Ho LEE ,  Seung Ki JUNG ,  You Jin JEONG ,  Tae Sub JUNG ,  Jeong Jin CHO ,  Masato FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20220123032A1

公开(公告)日：2022-04-21

申请号：US17360447

申请日：2021-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Duck LEE ,  Doo Sik SEOL ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Masato FUJITA

IPC: H01L27/146 ,  H01L23/60

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.