公开(公告)号：US20220344384A1

公开(公告)日：2022-10-27

申请号：US17537926

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ji JUNG ,  Doo Sik SEOL ,  Sung Min AN ,  Kyung Duck LEE ,  Kyung Ho LEE ,  Seung Ki JUNG ,  You Jin JEONG ,  Tae Sub JUNG ,  Jeong Jin CHO ,  Masato FUJITA

IPC: H01L27/146

Abstract: An image sensor includes a substrate with a first surface opposite a second surface, a pixel isolation pattern defining first and second unit pixels adjacent to each other in the substrate, and first and second separation patterns in the substrate. The first unit pixel includes first and second photoelectric conversion parts along a first direction. The second unit pixel includes third and fourth photoelectric conversion parts along a second direction intersecting the first direction. The first separation pattern extends in the second direction between the first and second photoelectric conversion parts. The second separation pattern extends in the first direction between the third and fourth photoelectric conversion parts. A width of the pixel isolation pattern, a width of the first separation pattern, and a width of the second separation pattern each decrease from the second surface of the substrate toward the first surface of the substrate.

公开(公告)号：US20220013552A1

公开(公告)日：2022-01-13

申请号：US17318231

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Ki BAEK ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Doo Sik SEOL ,  Seung Ki JUNG

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a first isolation region defining a unit pixel, a first photoelectric conversion region in the unit pixel, a second photoelectric conversion region in the unit pixel, the second photoelectric conversion region spaced apart from the first photoelectric conversion region, a floating diffusion region, the floating diffusion region adjacent to the first surface of the substrate, a first transfer gate on the first surface of the substrate, the first transfer gate between the first photoelectric conversion region and the floating diffusion region, and a second transfer gate on the first surface of the substrate, the second transfer gate between the second photoelectric conversion region and the floating diffusion region. At least a part of the first transfer gate is buried in the substrate, and a bottom surface of the first transfer gate is different in height from a bottom surface of the second transfer gate.

公开(公告)号：US20220165765A1

公开(公告)日：2022-05-26

申请号：US17373924

申请日：2021-07-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Sub JUNG ,  Seung Ki BAEK ,  Kyung Ho LEE

IPC: H01L27/146 ,  H04N9/04

Abstract: An image sensor includes a first element separation film inside a substrate and having a mesh shape, pixel regions on the substrate defined by the first element separation film and including at least first and second pixel regions, and a second element separation film inside the substrate and partitioning the first pixel region into sub-pixel regions, the second element separation film not being in the second pixel region, wherein the first pixel region includes first photoelectric conversion elements, and a first color filter on the first photoelectric conversion elements, the first color filter being one of white, green, and blue color filters, and wherein the second pixel region includes second photoelectric conversion elements, and a second color filter on the second photoelectric conversion elements, the second color filter being different from the first color filter and one of red and white color filters.

公开(公告)号：US20190052823A1

公开(公告)日：2019-02-14

申请号：US15948756

申请日：2018-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Sub JUNG ,  Dong Min KEUM ,  Bum Suk KIM ,  Jung Saeng KIM ,  Jong Hoon Park ,  Min JANG

IPC: H04N5/369 ,  H04N5/374 ,  H01L27/146

CPC classification number: H04N5/3696 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/36961 ,  H04N5/374

Abstract: An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

公开(公告)号：US20200286938A1

公开(公告)日：2020-09-10

申请号：US16551114

申请日：2019-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Gu JIN ,  Yong Hun KWON ,  Young Chan KIM ,  Sae Young KIM ,  Sung Young SEO ,  Moo Sup LIM ,  Tae Sub JUNG ,  Sung Ho CHOI

IPC: H01L27/146

Abstract: An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

公开(公告)号：US20220328554A1

公开(公告)日：2022-10-13

申请号：US17539277

申请日：2021-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan hee LEE ,  Kyung Ho LEE ,  Seung Ki BAEK ,  Seung Ki JUNG ,  Tae Sub JUNG

IPC: H01L27/146

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface opposing the first surface, a photodiode layer in the semiconductor substrate, a transfer gate on the photodiode layer, the transfer gate being on the first surface of the semiconductor substrate, a first trench recessed from the first surface of the semiconductor substrate at one side of the transfer gate, a first impurity injection region on at least a portion of a bottom surface of the first trench, the first impurity injection region not being on a sidewall of the first trench, and a lens on the second surface of the semiconductor substrate.

公开(公告)号：US20220123032A1

公开(公告)日：2022-04-21

申请号：US17360447

申请日：2021-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung Duck LEE ,  Doo Sik SEOL ,  Kyung Ho LEE ,  Tae Sub JUNG ,  Masato FUJITA

IPC: H01L27/146 ,  H01L23/60

Abstract: An image sensor includes a substrate including a first side on which light is incident, and a second side opposite to the first side, a pixel isolation pattern formed inside the substrate which defines a plurality of unit pixels, a first photoelectric conversion region and a second photoelectric conversion region arranged along a first direction, inside each of the unit pixels, and a region isolation pattern which protrudes from the pixel isolation pattern in a second direction intersecting the first direction, and defines an isolation region between the first photoelectric conversion region and the second photoelectric conversion region. A first width of the isolation region in the second direction on the first side is more than about 1.1 times a second width of the isolation region in the second direction on the second side.