公开(公告)号：US20230049165A1

公开(公告)日：2023-02-16

申请号：US17735150

申请日：2022-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEHWAN CHA ,  Minjae Oh ,  Kyungtae Jang

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: Semiconductor devices may include a first stack structure including interlayer insulating layers and gate electrodes alternately stacked in a first direction perpendicular to an upper surface of a substrate on a first region of the substrate and including a first lower stack structure and a first upper stack structure, a second stack structure including the interlayer insulating layers and sacrificial insulating layers alternately stacked in the first direction on a second region of the substrate and including a second lower stack structure and a second upper stack structure, a channel structure penetrating the first upper stack structure and the first lower stack structure, extending in the first direction, and including a channel layer, and an align key structure penetrating the second lower stack structure and extending in the first direction. The second upper stack structure may include a first align key region on the align key structure.

公开(公告)号：US20230207388A1

公开(公告)日：2023-06-29

申请号：US17817077

申请日：2022-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghoon Goo ,  Dongyoung Kim ,  Kyungtae Jang

IPC: H01L21/768

CPC classification number: H01L21/76843 ,  H01L21/76804 ,  H01L21/76861 ,  H01L21/76877

Abstract: To manufacture a semiconductor device, a structure is formed by alternately stacking a plurality of first films and a plurality of second films one-by-one on a substrate. A vertical hole is formed to vertically pass through the structure. A carbon-containing barrier film is formed to conformally cover an inner sidewall of the vertical hole. The carbon-containing barrier film is in contact with portions of the plurality of first films and the plurality of second films. A sacrificial metal film is formed on the carbon-containing barrier film in the vertical hole. The sacrificial metal film is removed to expose the carbon-containing barrier film. The carbon-containing barrier film is removed using an ashing process.