公开(公告)号：US11139197B2

公开(公告)日：2021-10-05

申请号：US16910493

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungyeon Ha ,  Yong-Ho Yoo

IPC: H01L21/8234 ,  H01L21/74 ,  H01L27/108 ,  H01L21/762 ,  H01L21/311 ,  H01L21/84

Abstract: A method of fabricating a semiconductor device includes forming a device isolation layer in a substrate to define a plurality of active regions extending in a first direction; forming a trench in an upper portion of the substrate that crosses the active regions in a second direction that intersects the first direction; forming a sacrificial layer that fills the trench; forming support patterns on the sacrificial layer, wherein the support patterns fill recessed regions provided at a top surface of the sacrificial layer; and removing the sacrificial layer. The support patterns are spaced apart from each other with the active regions interposed therebetween.