公开(公告)号：US10170472B2

公开(公告)日：2019-01-01

申请号：US15632815

申请日：2017-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Lak Gyo Jeong ,  Yong Rae Cho ,  Kyo Wook Lee ,  Hee Bum Hong

IPC: H01L27/088 ,  H01L27/11 ,  H01L27/02 ,  G11C8/16 ,  G11C11/412

Abstract: A semiconductor device includes a substrate first through fourth active fins on the substrate, extending in a first direction, and spaced apart from one another in a second direction that intersects the first direction, a first gate electrode extending in the second direction and on the first active fin to overlap with the first active fin but not with the second through fourth active fins, a second gate electrode extending in the second direction and on the second and third active fins to overlap with the second active fin but not with the first and fourth active fins, a first contact on the first gate electrode and connected to a first wordline, and a second contact on the second gate electrode and connected to a second wordline. The first through third active fins are between the first and second contacts. Related devices are also discussed.

公开(公告)号：US10964707B2

公开(公告)日：2021-03-30

申请号：US15985817

申请日：2018-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seol Un Yang ,  Lak Gyo Jeong ,  Hee Bum Hong

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/78

Abstract: A semiconductor device includes a substrate with a buffer region between first and second regions, the first region being a SRAM cell region, and the second region being a peripheral circuit region, first gate structures in a first direction on the first region and being spaced apart from each other in a second direction, second gate structures in the first direction on the second region and being spaced apart from each other in the second direction, the first and second gate structures being aligned with each other, a first insulating structure in the second direction on the buffer region between the first and the second regions along an entire length of each of the first and second regions in the second direction, and a second insulating structure on the first region and in contact with a part of the plurality of first gate structures.

公开(公告)号：US20180040616A1

公开(公告)日：2018-02-08

申请号：US15632815

申请日：2017-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Lak Gyo Jeong ,  Yong Rae Cho ,  Kyo Wook Lee ,  Hee Bum Hong

IPC: H01L27/088 ,  H01L27/11

CPC classification number: H01L27/0886 ,  G11C8/16 ,  G11C11/412 ,  H01L27/0207 ,  H01L27/1104

Abstract: A semiconductor device includes a substrate first through fourth active fins on the substrate, extending in a first direction, and spaced apart from one another in a second direction that intersects the first direction, a first gate electrode extending in the second direction and on the first active fin to overlap with the first active fin but not with the second through fourth active fins, a second gate electrode extending in the second direction and on the second and third active fins to overlap with the second active fin but not with the first and fourth active fins, a first contact on the first gate electrode and connected to a first wordline, and a second contact on the second gate electrode and connected to a second wordline. The first through third active fins are between the first and second contacts. Related devices are also discussed.