公开(公告)号：US20240134534A1

公开(公告)日：2024-04-25

申请号：US18158426

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhava Krishnan RAMANATHAN ,  Naga Sanjana BIKONDA ,  Shashwat JAIN ,  Vishwanath MARAM

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0659 ,  G06F3/0679

Abstract: A high endurance persistent storage device. In some embodiments, the persistent storage device includes: a controller circuit; persistent storage media, connected to the controller circuit; nonvolatile memory, connected to the controller circuit; and volatile memory, connected to the controller circuit.

公开(公告)号：US20240143517A1

公开(公告)日：2024-05-02

申请号：US18157553

申请日：2023-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhava Krishnan RAMANATHAN ,  Naga Sanjana BIKONDA ,  Shashwat JAIN ,  Vishwanath MARAM

IPC: G06F12/14

CPC classification number: G06F12/1483 ,  G06F12/1433

Abstract: Systems and methods for data protection. In some embodiments, a computational storage device includes a controller circuit, a first compute function of a first application, a second compute function of the first application, a common memory area; and a persistent storage device. The controller circuit may be configured: to receive a first request from a host, the first request defining a first allocated function data memory region, for the first compute function; to receive a first memory access request, from the first compute function, for a first memory location in the common memory area and outside the first allocated function data memory region; and to deny the first memory access request.