公开(公告)号：US20170110595A1

公开(公告)日：2017-04-20

申请号：US15149722

申请日：2016-05-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rwik Sengupta ,  Mark Stephen RODDER ,  Joon Goo HONG ,  Titash RAKSHIT

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/78696 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78654 ,  H01L29/78684

Abstract: A Gate-All-Around (GAA) Field Effect Transistor (FET) can include a horizontal nanosheet conductive channel structure having a width in a horizontal direction in the GAA FET, a height that is perpendicular to the horizontal direction, and a length that extends in the horizontal direction, where the width of the horizontal nanosheet conductive channel structure defines a physical channel width of the GAA FET. First and second source/drain regions can be located at opposing ends of the horizontal nanosheet conductive channel structure and a unitary gate material completely surrounding the horizontal nanosheet conductive channel structure.