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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20180331159A1

    公开(公告)日：2018-11-15

    申请号：US15783000

    申请日：2017-10-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gwi-deok Ryan LEE ,  Kwang-min LEE ,  Tae-yon LEE ,  Masaru ISHII

    IPC: H01L27/30 ,  H01L51/44

    CPC classification number: H01L27/307 ,  H01L51/442

    Abstract: Provided is an image sensor including an organic photoelectric layer capable of enhancing color reproduction. An image sensor includes a semiconductor substrate including a plurality of pixel regions spaced apart from each other and an isolation region therebetween. Each of the plurality of pixel regions has a unit pixel. The image sensor also includes a device isolation layer in the isolation region and surrounding the unit pixel, a first transparent electrode layer, an organic photoelectric layer, and a second transparent electrode layer. The image sensor further includes a via plug electrically connected to the first transparent electrode layer, and arranged between the device isolation layers in the isolation region. The via plug passes through the isolation region. The first transparent electrode layer, the organic photoelectric layer and the second transparent electrode layer are sequentially arranged over the semiconductor substrate.

    IMAGE SENSOR
    2.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200227482A1

    公开(公告)日：2020-07-16

    申请号：US16829265

    申请日：2020-03-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Mo IM ,  Gwi-Deok LEE ,  Tae-Yon LEE ,  Masaru ISHII

    IPC: H01L27/30 ,  H01L27/146 ,  H04N5/374

    Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.

    IMAGE SENSOR
    3.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20180301487A1

    公开(公告)日：2018-10-18

    申请号：US15804183

    申请日：2017-11-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gwi-Deok Ryan LEE ,  Tae Yon LEE ,  Kwang Min LEE ,  Masaru ISHII

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745

    Abstract: An image sensor includes first photoelectric elements, second photoelectric elements under the first photoelectric elements, and a pixel circuit including first semiconductor devices and second semiconductor devices under second photoelectric elements. The first semiconductor devices are connected to at least one of the first photoelectric elements. The second semiconductor devices are connected to at least one of the second photoelectric elements. The first semiconductor devices are connected to different first photoelectric elements and are in one of a plurality of pixel regions.

    UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR HAVING THE SAME
    4.
    发明申请
    UNIT PIXEL OF IMAGE SENSOR AND IMAGE SENSOR HAVING THE SAME 审中-公开
    图像传感器和图像传感器的单元像素

    公开(公告)号：US20150029365A1

    公开(公告)日：2015-01-29

    申请号：US14340703

    申请日：2014-07-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Gwi-Deok Ryan LEE ,  Hiroshige GOTO ,  Sang-Chul SUL ,  Myung-Won LEE ,  Masaru ISHII

    IPC: H04N9/04

    CPC classification number: H04N9/045 ,  H01L27/14665 ,  H04N5/37452 ,  H04N5/37457

    Abstract: A unit pixel is provided. The unit pixel includes photoelectric converters stacked on each other and configured to generate photo-charges in response to light signals within respective wavelength ranges and provide the photo-charges to respective storage nodes; memories configured to concurrently receive and store the photo-charges from the respective storage nodes in response to a common control signal; and a signal generator that generates analog signals based on the photo-charges stored in the memories, respectively.

    Abstract translation: 提供单位像素。 单位像素包括彼此堆叠并被配置为响应于各个波长范围内的光信号而产生光电荷的光电转换器，并且向相应的存储节点提供光电荷; 存储器，被配置为响应于公共控制信号同时从各个存储节点接收和存储光电费; 以及分别基于存储在存储器中的光电荷产生模拟信号的信号发生器。

    IMAGE SENSOR
    5.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20190131349A1

    公开(公告)日：2019-05-02

    申请号：US16106576

    申请日：2018-08-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-Mo IM ,  Gwi-Deok LEE ,  Tae-Yon LEE ,  Masaru ISHII

    IPC: H01L27/30 ,  H04N5/374 ,  H01L27/146

    Abstract: An image sensor includes a color filter on a substrate, first and second organic photodiodes on the color filter, and first and second capacitors connected to the first and second organic photodiodes, respectively. The color filter is spaced apart from a first surface of the substrate. Each of the first and second organic photodiodes face an upper surface of the color filter. The first capacitor includes a first conductive pattern and a first insulating space. The first conductive pattern extends through the substrate, and the first insulating spacer surrounds a sidewall of the first conductive pattern and has a first thickness. The second capacitor includes a second conductive pattern and a second insulating spacer. The second conductive pattern extends through the substrate, and the second insulating spacer surrounds a sidewall of the second conductive pattern and has a second thickness smaller than the first thickness.

    IMAGE SENSORS
    7.
    发明申请
    IMAGE SENSORS 审中-公开

    公开(公告)号：US20180301509A1

    公开(公告)日：2018-10-18

    申请号：US15787846

    申请日：2017-10-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru ISHII ,  GwideokRyan LEE ,  Taeyon LEE

    IPC: H01L27/30 ,  H01L27/146 ,  H04N5/378 ,  H04N5/374

    Abstract: An image sensor includes a photoelectric conversion element and a charge storage node coupled to the photoelectric conversion element. The charge storage node may store photocharges generated in the photoelectric conversion element. The charge storage node may include a floating diffusion region in a semiconductor substrate, a barrier dopant region on the floating diffusion region in the semiconductor substrate, and a charge drain region on the barrier dopant region in the semiconductor substrate, where the semiconductor substrate is associated with a first conductivity type, the floating diffusion region is associated with a second conductivity type, the barrier dopant region is associated with the first conductivity type, and the charge drain region is associated with the second conductivity type.

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