公开(公告)号：US20200312727A1

公开(公告)日：2020-10-01

申请号：US16709125

申请日：2019-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min KANG ,  Kyung Min KIM ,  Young Mok KIM ,  Min Hee UH

IPC: H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L21/84

Abstract: A method of manufacturing a semiconductor device includes providing a substrate including a first region and a second region, forming a first channel layer in the first region of the substrate, forming an isolation region in the substrate to electrically isolate a portion of the first region from a portion of the second region, etching an upper surface of the second region of the substrate, forming a protection layer covering the first channel layer in the first region of the substrate and the second region of the substrate, removing the protection layer on the second region of the substrate, forming a gate insulation material layer on the protection layer and on the second region of the substrate, and removing the gate insulation material layer and the protection layer on the first region of the substrate.