公开(公告)号：US20200312727A1

公开(公告)日：2020-10-01

申请号：US16709125

申请日：2019-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Min KANG ,  Kyung Min KIM ,  Young Mok KIM ,  Min Hee UH

IPC: H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L21/84

Abstract: A method of manufacturing a semiconductor device includes providing a substrate including a first region and a second region, forming a first channel layer in the first region of the substrate, forming an isolation region in the substrate to electrically isolate a portion of the first region from a portion of the second region, etching an upper surface of the second region of the substrate, forming a protection layer covering the first channel layer in the first region of the substrate and the second region of the substrate, removing the protection layer on the second region of the substrate, forming a gate insulation material layer on the protection layer and on the second region of the substrate, and removing the gate insulation material layer and the protection layer on the first region of the substrate.

公开(公告)号：US20190355719A1

公开(公告)日：2019-11-21

申请号：US16372166

申请日：2019-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Sung Chul PARK ,  Chul Hong PARK ,  Yoshinao HARADA ,  Sung Min KANG ,  Ji Wook KWON ,  Ha-Young KIM ,  Yuichi HIRANO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/40

Abstract: A semiconductor device includes first to fourth cells sequentially disposed on a substrate, first to third diffusion break structures, a first fin structure configured to protrude from the substrate, the first fin structure comprising first to fourth fins separated from each other by the first to third diffusion break structures, a second fin structure configured to protrude from the substrate, to be spaced apart from the first fin structure, the second fin structure comprising fifth to eighth fins separated from each other by the first to third diffusion break structures, the first to fourth gate electrodes being disposed in the first to fourth cells, respectively, and the number of fins in one cell of the first to fourth cells is different from the number of fins in an other cell of the first to fourth cells.