公开(公告)号：US20200234966A1

公开(公告)日：2020-07-23

申请号：US16540726

申请日：2019-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chong Kwang Chang ,  Dong Hoon KHANG ,  Sug Hyun SUNG ,  Min Hwan JEON

IPC: H01L21/308 ,  H01L21/8234 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.