公开(公告)号：US20250126908A1

公开(公告)日：2025-04-17

申请号：US18999977

申请日：2024-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Woong SEO ,  JungChak AHN ,  Jae-kyu LEE

IPC: H10F39/00 ,  H04N25/59 ,  H04N25/60 ,  H04N25/772 ,  H10B12/00 ,  H10F39/18

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

公开(公告)号：US20220336507A1

公开(公告)日：2022-10-20

申请号：US17856022

申请日：2022-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Woong SEO ,  JungChak AHN ,  Jae-kyu LEE

IPC: H01L27/146 ,  H04N5/335 ,  H01L27/108 ,  H04N5/355

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.

公开(公告)号：US20200260043A1

公开(公告)日：2020-08-13

申请号：US16599787

申请日：2019-10-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Woong SEO ,  Jaekyu LEE

IPC: H04N5/3745 ,  H04N5/351 ,  H04N5/378

Abstract: An image sensor includes a plurality of pixels. Each of the plurality of pixels includes a photodetector that includes a photoelectric conversion element that outputs a detection signal in response to light incident thereon, a comparator that compares the detection signal of the photodetector with a ramp signal and outputs a comparison signal in response thereto, a plurality of first memory cells that store a first counting value corresponding to a first voltage level of the detection signal using the comparison signal of the comparator and output the first counting value through a plurality of transmission lines, and a plurality of second memory cells that store a second counting value corresponding to a second voltage level of the detection signal using the comparison signal of the comparator and output the second counting value through the plurality of transmission lines.

公开(公告)号：US20200258926A1

公开(公告)日：2020-08-13

申请号：US16591059

申请日：2019-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Woong SEO ,  JungChak AHN ,  Jae-kyu LEE

IPC: H01L27/146 ,  H04N5/335 ,  H01L27/108 ,  H04N5/355

Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.