公开(公告)号：US20250079296A1

公开(公告)日：2025-03-06

申请号：US18624828

申请日：2024-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun Song ,  Jongmin Lee ,  Joongwon Shin

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/48 ,  H01L25/065

Abstract: A semiconductor device includes an interconnection region including lower interconnections on a device region; an insulating structure on the interconnection region; lower conductive patterns in the insulating structure; a first conductive via electrically connecting the lower conductive patterns to the lower interconnections; upper conductive patterns on the insulating structure; and second conductive vias in the insulating structure and electrically connecting the upper conductive patterns to the lower conductive patterns. The second conductive vias include a second metal layer and a second barrier layer, and the upper conductive patterns include a third barrier layer extending from the second barrier layer and on a portion of an upper surface of the insulating structure; a third metal layer on the third barrier layer and extending from the second metal layer; an upper metal layer on the third metal layer; and an upper anti-reflective layer on the upper metal layer.