Antenna structure and electronic device including the same

    公开(公告)号:US12107334B2

    公开(公告)日:2024-10-01

    申请号:US18075850

    申请日:2022-12-06

    IPC分类号: H01Q1/24 H01Q21/00

    CPC分类号: H01Q21/0006 H01Q1/246

    摘要: The disclosure relates to a fifth generation (5G) or pre-5G communication system supporting higher data rates after a fourth generation (4G) communication system such as Long Term Evolution (LTE). A module in a wireless communication system is provided. The module includes a plurality of antenna elements, an antenna substrate coupled to the plurality of antenna elements, a metal plate coupled to the antenna substrate, a calibration substrate coupled to a Radio Frequency (RF) component on a first face, and a conductive adhesive material for electrical coupling between the metal plate and the calibration substrate. The conductive adhesive material may be coupled to the calibration substrate on a second face different from the first face of the calibration substrate. The conductive adhesive material may include an air gap formed along a signal line included in the calibration substrate.

    Semiconductor devices including line identifier

    公开(公告)号:US12080645B2

    公开(公告)日:2024-09-03

    申请号:US18114337

    申请日:2023-02-27

    摘要: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of insulation layers and a plurality of electrode layers alternately stacked in a third direction intersecting with first and second directions. A plurality of channel structures extends through the stacked structure in the third direction. A first wiring group includes a plurality of first horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. A second wiring group includes a plurality of second horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. Each of the plurality of first and second horizontal wirings are connected to corresponding one of the plurality of channel structures. A first line identifier is disposed between the first wiring group and the second wiring group.

    MEMORY CONTROLLERS, MEMORY SYSTEMS, AND MEMORY MODULES

    公开(公告)号:US20230147227A1

    公开(公告)日:2023-05-11

    申请号:US17814964

    申请日:2022-07-26

    摘要: A memory controller includes an error correction code (ECC) engine and an error managing circuit. The ECC engine is configured to, during a read operation, perform an ECC decoding on a read codeword set to generate a first and second syndrome associated with a correctable error in a user data set included in the read codeword set, correct the correctable error based on the first syndrome and the second syndrome, and provide the second syndrome to the error managing circuit. The error managing circuit is configured to accumulate second syndromes associated with a plurality of correctable errors and obtained through a plurality of read operations as a plurality of second syndromes, store the plurality of second syndromes, compare the plurality of second syndromes with an error pattern set, and predict an occurrence of an uncorrectable error associated with the correctable error in a memory region based on the comparison.

    Semiconductor devices including line identifier

    公开(公告)号:US11594487B2

    公开(公告)日:2023-02-28

    申请号:US16950031

    申请日:2020-11-17

    摘要: A semiconductor device includes a stacked structure disposed on a substrate. The stacked structure includes a plurality of insulation layers and a plurality of electrode layers alternately stacked in a third direction intersecting with first and second directions. A plurality of channel structures extends through the stacked structure in the third direction. A first wiring group includes a plurality of first horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. A second wiring group includes a plurality of second horizontal wirings disposed on the stacked structure that are arranged in the first direction and extends in the second direction. Each of the plurality of first and second horizontal wirings are connected to corresponding one of the plurality of channel structures. A first line identifier is disposed between the first wiring group and the second wiring group.

    QUANTUM DOTS, A COMPOSITION OR COMPOSITE INCLUDING THE SAME, AND AN ELECTRONIC DEVICE INCLUDING THE SAME

    公开(公告)号:US20220298413A1

    公开(公告)日:2022-09-22

    申请号:US17824225

    申请日:2022-05-25

    摘要: Quantum dots and a composite and a display device including the quantum dots. The quantum dots comprise a semiconductor nanocrystal core comprising indium and phosphorous, and optionally zinc, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dots are configured to exhibit a maximum photoluminescence peak in a green light wavelength region, and in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dots, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak, and wherein the maximum photoluminescence peak of the quantum dots has a full width at half maximum of less than or equal to 40 nanometers.

    Quantum dots, a composition or composite including the same, and an electronic device including the same

    公开(公告)号:US11352558B2

    公开(公告)日:2022-06-07

    申请号:US16904664

    申请日:2020-06-18

    摘要: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.

    Antenna and electronic device including the same

    公开(公告)号:US11228120B2

    公开(公告)日:2022-01-18

    申请号:US16682852

    申请日:2019-11-13

    IPC分类号: H01Q21/29 H01Q1/22 H01Q21/00

    摘要: An electronic device is provided. The electronic device includes a housing, and a printed circuit board (PCB) disposed in an inner space of the housing and includes at least one first conductive contact exposed at least partially and electrically connected to a wireless communication circuit; and an antenna structure disposed on the PCB, including at least one first antenna element and at least one second conductive contact exposed at least partially and electrically connected to the at least one first antenna element. The at least one first conductive contact is electrically connected to the at least one second conductive contact when the antenna structure is combined with the PCB. The wireless communication circuit is configured to form a directional beam through the at least one first antenna element.